INVESTIGADORES
GROSZ Diego Fernando
congresos y reuniones científicas
Título:
On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
Autor/es:
G. A. PATTERSON; P. I. FIERENS; G. BELLOMO; D. F. GROSZ
Lugar:
Alberta
Reunión:
Conferencia; IInternational Conference on Applications in Nonlinear Dynamics (ICAND 2010); 2010
Resumen:
We recently showed that a ring of two bistable oscillators is capable of
storing a single bit of information via stochastic resonance. Memory performance
was characterized in terms of the probability of erroneous bit detection and was
shown to be minimized for a range of noise intensities. Furthermore, memory persistence
was also shown to exhibit a stochastic-resonance behavior. In this paper
we investigate the influence on memory performance, in particular its resilience to
noise, on both noise bandwidth and the limited time response of the bistable elements.
We show that, for broad ranges of ST and noise bandwidths, the probability
of erroneous bit retrieval is also minimized for an optimal noise intensity, exhibiting
a deep well as a function of noise intensity.We are interested in the breadth of such a
well as it points out to the robustness of the memory device under different working
conditions. Moreover, we show that there exists a relation between the noise and ST
bandwidths that favors wide wells.We believe that this relation may be of relevance
as a design rule for practical memory devices sustained by noise.
storing a single bit of information via stochastic resonance. Memory performance
was characterized in terms of the probability of erroneous bit detection and was
shown to be minimized for a range of noise intensities. Furthermore, memory persistence
was also shown to exhibit a stochastic-resonance behavior. In this paper
we investigate the influence on memory performance, in particular its resilience to
noise, on both noise bandwidth and the limited time response of the bistable elements.
We show that, for broad ranges of ST and noise bandwidths, the probability
of erroneous bit retrieval is also minimized for an optimal noise intensity, exhibiting
a deep well as a function of noise intensity.We are interested in the breadth of such a
well as it points out to the robustness of the memory device under different working
conditions. Moreover, we show that there exists a relation between the noise and ST
bandwidths that favors wide wells.We believe that this relation may be of relevance
as a design rule for practical memory devices sustained by noise.