INVESTIGADORES
QUINTEROS Cynthia Paula
congresos y reuniones científicas
Título:
Steps in current measurements under stress conditions
Autor/es:
A. KALSTEIN; C. QUINTEROS; F. PALUMBO
Lugar:
Buenos Aires
Reunión:
Encuentro; New frontiers in the physics of two dimensional electron systems; 2011
Institución organizadora:
ICAM
Resumen:
Al2O3/HfO2-based multilayer stacks seem to be an appropriate choice as alternative gate dielectrics in advanced MOS devices since it is expected that those stacks combine the main features of their individual components: large band gap in the case of Al2O3 and high dielectric constant in the case of HfO2. In this work, we present preliminary results about types of rupture by electric stress in structures with Al2O3, HfO2 and nanolaminate of them as dielectric.