Characterization of photodiodes built on standard CMOS 0.5µm process

RODRIGO LUGONES; JOSÉ LIPOVETZKY; ARIEL LUTENBERG; NICOLÁS RIGONI

Congreso; Congreso Argentino de Microelectrónica, Tecnología y Aplicaciones; 2011

In this poster, we will present the results obtained from measuring the sensitivity of ​​four photodiodes manufactured in a 0.5µm CMOS process using the following junctures: N‑WELL/P- Substrate with sizes of 100µmx100µm and 100µmx10µm, and ACTIVE N+/P- Substrate with similar sizes. The results are compared, discussing and analyzing the differences between each of the four types of photodiodes, accounting the geometric effects and doping.