Noise on resistive switching: a Fokker-Planck approach

G. A. PATTERSON; P. I. FIERENS; D. F. GROSZ

Barcelona

Conferencia; 7th International Conference on Unsolved Problems on Noise (UPON 2015); 2015

Stotland and Di Ventra were the first to present an analysis of the influence of noise on memristors. The interplay between noise and resistive switching has been further characterized, both experimentally and throughsimulations, in several papers. In this work we go back to the their seminal paper, where they analyzed the influence of additive white Gaussian noise on a simple model of a memristor put forth by Strukov et al. By means of numerical simulations, they showed that the contrast between low- and high-resistive states is enhanced by the addition of internal noise in the presence of a weak harmonic driving signal, and provided an explanation in terms of a stochastic resonance phenomenon.In this contribution, we aim at extending the work of Stotland and Di Ventra. Motivated by the potential application of resistive switching in the area of non-volatile data storage, we consider the case of non-harmonic drivingsignals. Noise is also shown to enhance the contrast between resistive states, and we provide an alternative explanation of the observed behavior in terms of the associated Fokker-Planck equation.