RESISTIVE SWITCHING PROPERTIES OF METAL / YBCO THIN FILM DEVICES

L. F.LANOSA; M. BOUDARD; C. JIMÉNEZ; C. ACHA

Buenos Aires

Conferencia; XXVII International Conference on low temperature physics (LT27); 2014

Departamento de Física - FCEyN - UBA e IFIBA-CONICET

Due to the growing requirements in electronic memories, alternatives to actual technologies are being studied in order to increase their speed and storage density and to lower their power consumption. The capacity to be used on hostile environments (eg. under high radiation doses) is for some applications a property that memories should also fulfill in order to ensure their correct operation. Among the alternatives, ReRAM (Resistance Random Access Memory) is being developed. This type of memories makes use of the resistive switching (RS) phenomena present in metal/oxide junctions to storage information. In RS it is possible to alternate between a high (RH) and a low (RL) non-volatile resistance state while applying a proper electric field to the junction. In this work we present our studies on RS properties of ReRAM devices made by sputtering Au or Pt on top of YBa2Cu3O7 (YBCO) thin films grown by MOCVD (Metal Organic Chemical Vapor Deposition). Studies of their resistive switching properties, their volatile and non-volatile memory states and their current-voltage characteristics are shown as a function of temperature (77 K ? 300 K) and of 60Co gamma-radiation dose (up to 1 kGy). Our results are analyzed considering different types of conduction mechanisms at the interface.