Diffusion with traps as the mechanism behind the retentivity relaxation of the resistive state on bipolar RRAM devices

A. SCHULMAN; M. J. ROZENBERG; C. ACHA

Baltimore

Conferencia; APS March Meeting 2013; 2013

APS

The relaxation of the remnant resistance state obtained immediatelyafter the electric-pulse switching process on metal/complex oxide interfaces[(Au, Pt) / (YBCO, LSMO)] has been studied. We have found thatresistance relaxes following a stretched exponential law, with a temperatureand applied switching power independent exponent. More interestingand unlike ordinary thermal diffusion processes, we observe that thecharacteristic relaxation time increases with increasing temperature andapplied power. This anomalous dependence of the characteristic timegave us the opportunity to find an interesting physic process related tothe oxygen diffusion on complex oxides, like superconducting cupratesor colossal magnetoresistant manganites: We argue that the observedbehavior, common for both complex oxide interfaces, points to a genericphenomenon that can be understood as due to the diffusion of oxygenions (or oxygen vacancies) moving on a 2D surface (grain boundaries)with a temperature dependent density of trapping centers.