INVESTIGADORES
MARTINEZ Oscar Eduardo
artículos
Título:
TRANSIENT GRATING MEASUREMENTS OF AMBIPOLAR DIFFUSION AND CARRIER RECOMBINATION IN INGAP/INALP MULTIPLE-QUANTUM WELLS AND INGAP BULK
Autor/es:
PRASAD, M; O.E. MARTÍNEZ; C.S. MENONI; J.J. ROCCA; J.L.A. CHILLA
Revista:
JOURNAL OF ELECTRONIC MATERIALS
Editorial:
SPRINGER
Referencias:
Lugar: Berlin; Año: 1994 vol. 23 p. 359 - 362
ISSN:
0361-5235
Resumen:
The ambipolar diffusion coefficient and carrier recombination lifetime in InGaP/InAlP multiple quantum wells and InGaP epitaxial layers grown by gas source molecular beam epitaxy have been determined by measuring the diffraction efficiency decay of transient gratings induced by picosecond laser pulses. The multiple quantum well room temperature ambipolar diffusion coefficient of carrier transport parallel to the growth plane was measured to be approximately half that of the bulk material.
