Non-volatile magnetoresistive memory in phase separated La0.325Pr0.300Ca0.375MnO3

P. LEVY; F. PARISI; M. QUINTERO; L. GRANJA; J. CURIALE; JOAQUIN SACANELL; G. LEYVA; G. POLLA; R. S. FREITAS; L. GHIVELDER

PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS

American Physical Society

Año: 2002 vol. 65 p. 140401 - 140403

0163-1829

We have measured magnetic and transport response on the polycrystalline La5/82yPryCa3/8MnO3 (y=0.30, average grain size 2 microns) compound. In the temperature range where ferromagnetic metallic and insulating regions coexist, we observed a persistent memory of low magnetic fields (~1 T) that is determined by the actual amount of the ferromagnetic phase. The possibility to manipulate this fraction with relatively small external perturbations is related to the phase-separated nature of these manganese-oxide-based compounds. The colossal magnetoresistance figures obtained (about 80%) are determined by the fraction enlargement mechanism. Self-shielding of the memory to external fields is found under certain described circumstances. We show that this nonvolatile memory has multilevel capability associated with different applied low magnetic-field values.