SU(4) Kondo entanglement in double quantum dot devices

BONAZZOLA, RODRIGO; ANDRADE, J.A.; FACIO, JORGE I.; GARCÍA, D.J.; CORNAGLIA, PABLO S.

Physical Review B

American Physical Society

Año: 2017 vol. 96

2469-9950

We analyze, from a quantum information theory perspective, the possibility of realizing an SU(4) entangled Kondo regime in semiconductor double quantum dot devices. We focus our analysis on the ground-state properties and consider the general experimental situation where the coupling parameters of the two quantum dots differ. We model each quantum dot with an Anderson-type Hamiltonian including an interdot Coulomb repulsion and tunnel couplings for each quantum dot to independent fermionic baths. We find that the spin and pseudospin entanglements can be made equal, and the SU(4) symmetry recovered, if the gate voltages are chosen in such a way that the average charge occupancies of the two quantum dots are equal, and the double occupancy on the double quantum dot is suppressed. We present density matrix renormalization group numerical results for the spin and pseudospin entanglement entropies, and analytical results for a simplified model that captures the main physics of the problem.