HfO2 based memory device with rectifying capabilities

C. P. QUINTEROS; F. G. MARLASCA; P. STOLIAR; R. ZASPE; F. GOLMAR; L. HUESO; P. LEVY

JOURNAL OF APPLIED PHYSICS

AMER INST PHYSICS

Lugar: New York; Año: 2014 vol. 115

0021-8979

We report on the fabrication and characterization of metal/ insulator/ metal capacitor like devices, with both rectifying and hysteretic features. Devices are formed by two junctions, Ti/HfO2 and Co/HfO2. Each junction exhibits highly repetitive hysteretic I-V curves with a sharp transition from a High to a Low resistance state (3-4 orders of magnitude jump). The opposite transition (from Low to High) is induced by polarity reversal. The rectifying non-crossing characteristics of the I-V branches denote their potential use as a multifunctional device, acting as a built -in rectifier and memory cell in a single device. Based on the phenomenological model description by Zazpe et al. [Appl. Phys. Lett. 103, 073114 (2013)], we propose a circuital equivalent representation supported on switchable rectifying junctions. By exploring different electrode connections, we disentangle the role of the bulk transport in HfO2 devices.