INVESTIGADORES
UÑAC Rodolfo Omar
artículos
Título:
Study of the temperature programmed desorption of In on Si(lO0) surfaces
Autor/es:
UÑAC, R.O.; SALES, J. L.; ZGRABLICH, G.
Revista:
JOURNAL OF PHYSICS CONDENSED MATTER
Editorial:
IOP PUBLISHING LTD
Referencias:
Lugar: Londres; Año: 1993 vol. 5 p. 143 - 144
ISSN:
0953-8984
Resumen:
Indium growth on Si(lO0) is investigated through Monte Carlo simulation. The study supports the model proposed by Knall et al. (1989).
