INVESTIGADORES
RAMUNNI Viviana Patricia
artículos
Título:
Simulation Studies of Diffusion Behavior in Al/U interfaces
Autor/es:
V.P. RAMUNNI; M.I. PASCUET; J. R. FERNÁNDEZ
Revista:
Proc. of MMM 2010, Microstructure Modeling
Editorial:
Proceeding en el congreso Internacional MMM2010. October 4-8, 2010, Freiburg, Germany
Referencias:
Lugar: Freiburg; Año: 2010 p. 719 - 722
ISSN:
1437-8523
Resumen:
Atomic mobility at the Al(fcc)/U(A20) interface by using different computer simulation techniques is studied. Suitable interatomic EAM potentials for the UAl system are used for this purpose. Vacancy and impurity properties are investigated in tetragonal U and Al bulk phases and near the interface. Results suggest a faster Al mobility into U than vice versa.