Mathematical Modelling of the Liquid Encapsulated Czochralski Growth of Gallium Arsenide. Part I-Heat Flow Model

C. E. SCHVEZOV; I. V. SAMARASEKERA; F. WEINBERG

JOURNAL OF CRYSTAL GROWTH

Published by Elsevier Science Publishers B.V. (North Holland Physics Publishing Division

Lugar: Sara Burgerhartstraat 25. 1055 KV Amsterdam. Netherlands.; Año: 1987 vol. 84 p. 212 - 218

0022-0248

The temperature distribution in GaAs crystal during growth has been determined using a fiite element model of the heat flow in a LEC Czochralski system. The model results which include estimated values for the boundary parameters, are shown to be in good agreement with analytical solutions to the heat flow equations, using simplified boundary conditions, and to the experimental temperature measurements in a LEC Melbourn grower at 3.04 MPa pressure.