INVESTIGADORES
SCHVEZOV Carlos Enrique
artículos
Título:
Mathematical Modelling of Semiconductor Crystal Growth
Autor/es:
C. SCHVEZOV
Revista:
Journal of the Argentine Chemical Society
Editorial:
Asociación Química Argentina
Referencias:
Lugar: Buenos Aires - Argentina; Año: 1996 vol. 84 p. 261 - 264
ISSN:
0365-0375
Resumen:
Results of mathematical modeling using finite element method applied to bula semiconductor growth are reviewed. The models include the Liquid Encapsulated Czochralski and the vertical Bridgman growth processes. The models were applied to study the generation of dislocations and include temperature and resolved shear stress fields in excess of the critical resolved shear stress. A summary of the main conclusions is presented and the applicability ofmodeling is discussed.
