Calculation of the Thermal and Stress Fields in LEC Gallium Arsenide After Separation from the Melt

C. E. SCHVEZOV; I. V. SAMARASEKERA; F. WEINBERG

JOURNAL OF CRYSTAL GROWTH

Published by Elsevier Science Publishers B.V. (North Holland Physics Publishing Division)

Lugar: Sara Burgerhartstraat 25. 1055 KV Amsterdam. Netherlands.; Año: 1988 vol. 92 p. 489 - 497

0022-0248

Stress fields in LEC GaAs after removal from the melt, during transient cooling, have been calculated. The results show that the stresses developed near the bottom of the crystal can be two to four times larger than the stresses developed in the crystal during growth. If gowth is terminated by tapering, the stress levels in the crystal remains below thegrowth stresses.