Calculation of the Shear Stress Distributiuon of LEC Gallium Arsenide for different Growth Conditions

C. E. SCHVEZOV; I. V. SAMARASEKERA; F. WEINBERG

JOURNAL OF CRYSTAL GROWTH

Published by Elsevier Science Publishers B.V. (North Holland Physics Publishing Division

Lugar: Sara Burgerhartstraat 25. 1055 KV Amsterdam. Netherlands.; Año: 1988 vol. 92 p. 479 - 488

0022-0248

The shear stress distribution of LEC GaAs, during crystal growth, has been calculated for a range of growth and envirometal parameters, and can be directly related to the dislocation distribution. The parameters considered include crystal length, crystal radius, cone taper, boron oxide thickness, gas pressure, solid/liquid interface shape, vertical temperature distribution and others. The results show that the magnitude and distribution of the calculated shear stresses are highly sensitive to the crystal environment, including the thickness and the temperature distribution in the argon gas. The shear stress is also strongly influenced by the interface curvature and crystal radius.