Kinetics of electron induced desorption of hydrogen in nanostructured porous silicon

G. D. RUANO; J. FERRÓN; R. D. ARCE; R. R. KOROPECKI

Valencia-España

Congreso; Porous Semiconductors Science and Technology PSST 2010 6th International Conference Valencia; 2010

EM-Silicon Nano-Technologies S.L.

We show that electron bombardment produces hydrogen desorption from nanostructured porous silicon. The kinetics of the electron induced effusion cannot be explained in terms of thermal processes or by direct transference of  energy from the impinging electron to the Si-H bonds. We found that a mechanism in which short lived-large energy flucuations (SLEFs) occurring during bimolecular recombination processes of carriers produces simultaneously a midgap increment of the density of electronic defect states, and hydrogen desorption