INVESTIGADORES
RUANO SANDOVAL Gustavo Daniel
congresos y reuniones científicas
Título:
Reversible ion induced modification of secondary electron emission in porous silicon
Autor/es:
G. D. RUANO; J. FERRÓN; R. KOROPECKI
Lugar:
Mallorca España
Reunión:
Congreso; Porous Semiconductors Science and Technology PSST 2008 6th International Conference Mallorca; 2008
Resumen:
<!-- @page { size: 21cm 29.7cm; margin: 2cm } P { margin-bottom: 0.21cm } --> The secondary electron emission (SEE) induced by energetic electron bombardment, of porous silicon (PS) was studied under different conditions. We show that Ar+ ion bombardment with energies ranging from 1 to 5 keV induces a reversible reduction of the electron beam induced SEE. We present a simple model based on dynamic charging effects related to the nanostructure characteristics and the different ranges of ions and electrons. The time evolution of SEE after ion bombardment suppression is compatible with the existence of a near-surface dipole formation, which we associate to the SEE reduction effect.