INVESTIGADORES
ARCE roberto Delio
artículos
Título:
Large-grained oriented polycrystalline silicon thin films prepared by nickel-silicide-induced crystallization
Autor/es:
J.A. SCHMIDT; N. BUDINI; P. RINALDI; R.D. ARCE; R.H. BUITRAGO
Revista:
JOURNAL OF CRYSTAL GROWTH
Editorial:
Elsevier
Referencias:
Lugar: Amsterdam; Año: 2008 vol. 311 p. 54 - 58
ISSN:
0022-0248
Resumen:
Nickel-silicide- induced crystallization of hydrogenated amorphous silicon thin films has been investigated. Intrinsic and doped films were deposited on glass substrates by HF-PECVD,and Ni was dc sputtered on top.Nucleation and growth of grains were followed by optical microscopy,scanning electron microscopy(SEM),UV reflectanceandX-raydiffraction.Homogeneous,largeandoriented grains, with diameters over 25 mm, were obtained in intrinsic and lightly boron-doped films. Phosphorous-dopedfilmspresentedarandomneedle-like growing mechanism, instead of the disk shape shown by the other samples. The effect of doping elementsonthe crystallization process is discussed.