INVESTIGADORES
ARCE roberto Delio
artículos
Título:
Post-growth annealing effects in compensated Ac-Si:H samples.
Autor/es:
DUSSAN, A.; KOROPECKI, R.R.; ARCE, R.D.; SCHMIDT, J.A.; BUITRAGO, R.H.
Revista:
JOURNAL OF NON-CRYSTALLINE SOLIDS
Editorial:
Elsevier
Referencias:
Lugar: Amsterdam; Año: 2004 vol. 338 p. 430 - 433
ISSN:
0022-3093
Resumen:
In this work we study the e.ect of low temperature annealing on the transport properties of lc-Si:H. We performed post-growth annealing on a series of micro-doped lc-Si:H samples having di.erent degrees of compensation, extending from n-type to p-type character. The samples were isothermally annealed at 423 K, 10 K below the deposition temperature. An increase of up to four orders of magnitude was observed in the dark conductivity (rdk) for the low temperature region. Simultaneously, the activation energy (Ea) of the dark conductivity changes depending on the doping level and the annealing time. Absorption coe.cient and density of states measurements have been done for di.erent annealing stages by using the constant photocurrent method and the modulated photocurrent technique, respectively. The density of defects in the midgap region increases during the annealing while the band tails remain una.ected. The rdk and Ea behavior can be interpreted in terms of a shift of the Fermi level towards the valence band. A model based in doping activation is proposed in order to explain this behavior.lc-Si:H. We performed post-growth annealing on a series of micro-doped lc-Si:H samples having di.erent degrees of compensation, extending from n-type to p-type character. The samples were isothermally annealed at 423 K, 10 K below the deposition temperature. An increase of up to four orders of magnitude was observed in the dark conductivity (rdk) for the low temperature region. Simultaneously, the activation energy (Ea) of the dark conductivity changes depending on the doping level and the annealing time. Absorption coe.cient and density of states measurements have been done for di.erent annealing stages by using the constant photocurrent method and the modulated photocurrent technique, respectively. The density of defects in the midgap region increases during the annealing while the band tails remain una.ected. The rdk and Ea behavior can be interpreted in terms of a shift of the Fermi level towards the valence band. A model based in doping activation is proposed in order to explain this behavior.lc-Si:H samples having di.erent degrees of compensation, extending from n-type to p-type character. The samples were isothermally annealed at 423 K, 10 K below the deposition temperature. An increase of up to four orders of magnitude was observed in the dark conductivity (rdk) for the low temperature region. Simultaneously, the activation energy (Ea) of the dark conductivity changes depending on the doping level and the annealing time. Absorption coe.cient and density of states measurements have been done for di.erent annealing stages by using the constant photocurrent method and the modulated photocurrent technique, respectively. The density of defects in the midgap region increases during the annealing while the band tails remain una.ected. The rdk and Ea behavior can be interpreted in terms of a shift of the Fermi level towards the valence band. A model based in doping activation is proposed in order to explain this behavior.rdk) for the low temperature region. Simultaneously, the activation energy (Ea) of the dark conductivity changes depending on the doping level and the annealing time. Absorption coe.cient and density of states measurements have been done for di.erent annealing stages by using the constant photocurrent method and the modulated photocurrent technique, respectively. The density of defects in the midgap region increases during the annealing while the band tails remain una.ected. The rdk and Ea behavior can be interpreted in terms of a shift of the Fermi level towards the valence band. A model based in doping activation is proposed in order to explain this behavior.Ea) of the dark conductivity changes depending on the doping level and the annealing time. Absorption coe.cient and density of states measurements have been done for di.erent annealing stages by using the constant photocurrent method and the modulated photocurrent technique, respectively. The density of defects in the midgap region increases during the annealing while the band tails remain una.ected. The rdk and Ea behavior can be interpreted in terms of a shift of the Fermi level towards the valence band. A model based in doping activation is proposed in order to explain this behavior.rdk and Ea behavior can be interpreted in terms of a shift of the Fermi level towards the valence band. A model based in doping activation is proposed in order to explain this behavior.