INVESTIGADORES
ARCE roberto Delio
artículos
Título:
Internal strain distribution in free-standing porous silicon
Autor/es:
Y. PUSEP; A. D. RODRIGUES; J. C. GALZERANI; R. D. ARCE; R.R. KOROPECKI; D. COMEDI
Revista:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Editorial:
Electrochemical Society
Referencias:
Lugar: New York; Año: 2009 vol. 156 p. 215 - 217
ISSN:
0013-4651
Resumen:
Elastic properties of free-standing porous silicon layers fabricated by electrochemical anodization were studied by Raman scattering. Different anodization currents provided different degrees of porosity in the nanometer scale. In the samples with different porosity Raman scattering revealed the low-frequency and high-frequency lines caused by the longitudinal optical (LO) phonons of the amorphous and crystal phases respectively.
