INVESTIGADORES
ARCE roberto Delio
artículos
Título:
Fano resonance in heavily doped porous silicon
Autor/es:
Y. PUSEP; A. D. RODRIGUES; L.J.BORRERO-GONZALEZ; L.N. ACQUAROLI; R. URTEAGA; R. D. ARCE; R.R. KOROPECKI; M. TIRADO; D. COMEDI
Revista:
Journal of Raman Spectroscopy
Editorial:
Wiley
Referencias:
Año: 2010 vol. 42 p. 1405 - 1407
ISSN:
1097-4555
Resumen:
Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO2 interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined.
