INVESTIGADORES
ARCE roberto Delio
artículos
Título:
Infrared Study of the Si-H Stretching Band in a-SiC:H.
Autor/es:
KOROPECKI, R. R.; F. ALVAREZ; ARCE, R.D.
Revista:
JOURNAL OF APPLIED PHYSICS
Editorial:
AMER INST PHYSICS
Referencias:
Lugar: New York; Año: 1991 vol. 69 p. 7805 - 7810
ISSN:
0021-8979
Resumen:
Amorphous silicon carbide (a‐Si1−xCx:H) samples having x ≤ 0.4 were studied by infrared and visible spectroscopy. Treatment by factor analysis of the 20002100 cm−1 absorption band of the spectra allows us to interpret this particular vibrational mode in terms of only two independent contributions. The analysis shows that polarization inductive shifting is not significant. An IR study of the evolution of this band during oxidation of porous samples was also performed. All the experimental evidence indicates that the growth of free volumes induced by the presence of carbon plays the most important role in the behavior of the 20002100 cm−1 band upon stoichiometric variations.
