INVESTIGADORES
ARCE roberto Delio
artículos
Título:
Oxidation Mechanism in High Pressure dc-Sputtered Amorphous Silicon.
Autor/es:
KOROPECKI, R. R.; DE BERNARDEZ, L; ARCE, R. D.; BUITRAGO, R.H.
Revista:
JOURNAL OF NON-CRYSTALLINE SOLIDS
Editorial:
ELSEVIER SCIENCE BV
Referencias:
Lugar: Amsterdam; Año: 1985 vol. 74 p. 11 - 17
ISSN:
0022-3093
Resumen:
The oxygen incorporation in a-Si films when they are exposed to air after preparation is analyzed in this article. Using IR spectroscopy it is possible to show that more than one mechanism is involved during oxidation. The IR spectra also show that oxygen included during deposition is attached in a different way from that which is included after preparation.