INVESTIGADORES
ARCE roberto Delio
artículos
Título:
OXYGEN DEPTH PROFILING OF HIGH PRESSURE DC-SPUTIERED AMORPHOUS SILICON
Autor/es:
R.R. KOROPECKI; R.D. ARCE; J. FERRÓN
Revista:
APPLIED SURFACE SCIENCE
Editorial:
ELSEVIER SCIENCE BV
Referencias:
Lugar: Amsterdam; Año: 1985 vol. 25 p. 321 - 326
ISSN:
0169-4332
Resumen:
We have measured the in-depth oxygen concentration of high pressure DC-sputtered a-Si films. The measurements were performed by means of AES and IR spectroscopy, immediately after sample preparation and after air exposure during two weeks. We found that post incorporation of oxygen is not located at the thin film surface, supporting the idea that a-Si films prepared by high pressure sputtering present an open pore network, as it has been previously proposed.
