a-Si thin-filtn growth by sputtering: A Monte Carlo study

J. FERRÓN; R.R. KOROPECKI; R.D. ARCE

PHYSICAL REVIEW B - SOLID STATE

APS

Lugar: New York; Año: 1987 vol. 35 p. 7611 - 7617

0556-2805

Through a Monte Carlo approach, we have studied the a-Si growth by sputtering. We have studied the effect of the energetic —silicon-atom and —argon-ion bombardment on the structure of the resulting films. We found two competing processes in the film growth, depending on the Ar+ energy and Ar-Si current ratio. We also found that the coalescence of the a-Si structure cannot be attributed to silicon bombardment. On the other hand, energetic —argon-ion bombardment may be responsible for such coalescence.