INVESTIGADORES
ARCE roberto Delio
artículos
Título:
Infrared Study of the Kinetics of Oxidation in Porous Amorphous Silicon
Autor/es:
R.D. ARCE; R.R. KOROPECKI
Revista:
JOURNAL OF APPLIED PHYSICS
Editorial:
AMER INST PHYSICS
Referencias:
Lugar: New York; Año: 1986 vol. 60 p. 1802 - 1808
ISSN:
0021-8979
Resumen:
Infrared spectroscopy has been appl.ied to the study of the kinetics of oxidation in high-pressure dc-sputtered amorphous silicon. The different spectra obtained during the evolution of the oxidation are processed by factor analysis. Two oxidation mechanisms have been found. Their associated infrared spectra and time evolution can be explained by a model that proposes the existence of a two-level microstructure. The spectra ssociated with each one of the oxidation mechanisms seems to correspond mainly to Si02, modified by the presence of surface modes.
