INVESTIGADORES
VIDAL ricardo Alberto
artículos
Título:
AES and factor analysis study of silicide growth at the Pd/c-Si interfase
Autor/es:
L. STEREN; R. VIDAL; J. FERRÓN
Revista:
APPLIED SURFACE SCIENCE
Editorial:
Elsevier
Referencias:
Año: 1987 vol. 29 p. 418 - 426
ISSN:
0169-4332
Resumen:
We have measured the evolution of a palladium/silicon interface under consecutive annealing periods, performed at 200 ºC in UHV conditions. The interface was analyzed by means of Auger electron spectroscopy combined with factor analysis applied in a sequential way. We found that silicide appears only after annealing and evolves until all the palladium is consumed. A silicon compound different from silicide, identified as Pd, Si with x<2 is found at the interface Pd/Si and Pd2Si/Si, before and after annealing respectively.
