INVESTIGADORES
VIDAL ricardo Alberto
artículos
Título:
Extended Hückel cluster calculations of the L2,3VV Auger transition in silicon
Autor/es:
R. VIDAL; M. C. G. PASSEGGI; E. C. GOLDBERG; J. FERRÓN
Revista:
SURFACE SCIENCE
Editorial:
Elsevier
Referencias:
Año: 1988 vol. 201 p. 97 - 107
ISSN:
0039-6028
Resumen:
We report an independent-electron model calculation of the L2,3VV Auger lineshape for an ideal Si(100) surface. Valence states were calculated for a cluster of Si atoms using the extended Hückel approximation. Atomic Auger matrix elements were evaluated using the Clementi wave functions for the Si atoms and a Coulombian wave for the continuum wave function. Fairly good agreement between theoretical results and experimental data is found when the presence of the free surface is taken into account.
