INVESTIGADORES
VIDAL ricardo Alberto
artículos
Título:
The first stages of oxidation of a-Si. a study of the L2,3VV Auger lineshape
Autor/es:
R. VIDAL; M. C. G. PASSEGGI
Revista:
JOURNAL OF PHYSICS CONDENSED MATTER
Editorial:
Institute of Physics
Referencias:
Año: 1989 vol. 1 p. 5783 - 5792
ISSN:
0953-8984
Resumen:
We report an independent-electron model calculation of the L2,3VV Auger lineshapefor the ideal Si( 100) surface with oxygen impurities incorporated at different positionswith respect to the surface. The L2,3VV Auger lineshape is compared with experimentalspectra measured during the first stages of oxidation of a-Si. The Auger lineshape obtainedfor an oxygen monolayer over the Si( 100) surface in a bridging configuration compares wellwith experimental spectra.
