Chemical reactivity of alkali-semiconductor interfaces: the case of K/GaAs (110) and K/Si (110) interfaces

M. C. G. PASSEGGI, JR.; I. VAQUILA; R. VIDAL; J. FERRÓN

SURFACE SCIENCE

Elsevier

Año: 1996 vol. 355 p. 100 - 108

0039-6028

The growth at room temperature of K/GaAs(110) and K/Si(100) interfaces have been studied using Auger electron spectroscopy and principal component analysis. The PCA of K Auger line of K/GaAs(110) reveals the existence of three pure independent components. The splitting, without lineshape modifications, of the first two of them suggests the formation of complexes of different size at the surface. The third component has remarkable lineshape modifications with respect to the others and it observed from the beginning of the evaporation process indicating the reactivity of the K/GaAs(11) interface. This is not the case for the K/Si(100) interface, where PCA only reveals the splitting of the different sized complexes.