INVESTIGADORES
PASSEGGI mario Cesar Guillermo
artículos
Título:
Chemical reactivity of alkali-semiconductor interfaces: the case of K/GaAs(110) and K/Si(100) interfaces
Autor/es:
PASSEGGI (JR.), M.C.G.; VAQUILA, I.; VIDAL, R.A.; FERRÓN, J.
Revista:
SURFACE SCIENCE
Editorial:
Elsevier Science
Referencias:
Lugar: Amsterdam, Holanda; Año: 1996 vol. 355 p. 100 - 108
ISSN:
0039-6028
Resumen:
The growth at room temperature of K/GaAs(110) and K/Si(100) interfaces have been studied using Auger electron spectroscopy and principal component analysis. The PCA of the K Auger line of K/GaAs(110) reveals the existence of three pure independent components. The splitting, without lineshape modifications, of the first two of them suggests the formation of complexes of different size at the surface. The third component has remarkable lineshape modifications with respect to the others and it is observed from the beginning of the evaporation process indicating the reactivity of the K/GaAs(110) interface. This is not the case for the K/Si(100) interface, where PCA only reveals the splitting of different sized complexes.