G.N. DARRIBA; E. L. MUÑOZ; D. RICHARD; A. P. AYALA; A.W. CARBONARI; H. M. PETRILLI; M. RENTERÍA

Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed gamma-gamma angular correlation studies in 111In (111Cd)-doped tin oxides

PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS; Año: 2022 vol. 105 p. 195201 - 195201

VALLUZZI, LUCAS G.; VALLUZZI, MARCOS G.; DARRIBA, GERMÁN N.; MEYER, MARCOS; DAMONTE, LAURA C.

Surfactant and dopant addition effect on optical and structural properties of ZnSe (Te) nanostructured semiconductors

JOURNAL OF ALLOYS AND COMPOUNDS; Año: 2020 vol. 829

DARRIBA, G.N.; FACCIO, R.; RENTERÍA, M.

Electric field gradient study on pure and Cd-doped In(111) surfaces: Correlation between experiments at the atomic scale and first-principles calculations

Physical Review B; Año: 2019 vol. 99

G. N. DARRIBA; E. L. MUÑOZ; A.W. CARBONARI; M. RENTERÍA

Experimental TDPAC and Theoretical DFT Study of Structural, Electronic, and Hyperfine Properties in (111In → )111Cd-Doped SnO2 Semiconductor: Ab Initio Modeling of the Electron-Capture-Decay After-Effects Phenomenon

JOURNAL OF PHYSICAL CHEMISTRY C; Lugar: Washington; Año: 2018 vol. 122 p. 17423 - 17436

DAMONTE, L.C.; DARRIBA, G.N.; RENTERÍA, M.

Structural and electronic properties of Al-doped ZnO semiconductor nanopowders: Interplay between XRD and PALS experiments and first-principles/DFT modeling

JOURNAL OF ALLOYS AND COMPOUNDS; Año: 2018

D. RICHARD; G. N. DARRIBA; E. L. MUÑOZ; L. A. ERRICO; P. D. EVERSHEIM; M. RENTERÍA

Experimental and First-Principles Theoretical Study of Structural and Electronic Properties in Ta-doped In2O3 Semiconductor: Finding a Definitive Hyperfine Interaction Assignment

JOURNAL OF PHYSICAL CHEMISTRY C; Lugar: Washington; Año: 2016 vol. 120 p. 5640 - 5650

G. N. DARRIBA; R. FACCIO; M. RENTERÍA

First-principles study of Cd impurities localized at and near the (001) alpha-Al2O3 surface

COMPUTATIONAL MATERIALS SCIENCE; Lugar: Amsterdam; Año: 2015 vol. 107 p. 15 - 23

D. RICHARD; G. N. DARRIBA; E. L. MUÑOZ; L. A. ERRICO; M. RENTERÍA

Ionic exchange and the local structure in the HfO2/Ho2O3 system studied by PAC spectroscopy

JOURNAL OF ALLOYS AND COMPOUNDS; Lugar: Amsterdam; Año: 2014 vol. 594 p. 189 - 196

G. N. DARRIBA; E. L. MUÑOZ; L. A. ERRICO; M. RENTERÍA

Ab Initio Study of Structural, Electronic, and Hyperfine Properties of n-type SnO2:Ta Semiconductor

JOURNAL OF PHYSICAL CHEMISTRY C; Lugar: Washington; Año: 2014 vol. 118 p. 19929 - 19939

G. N. DARRIBA; M. RENTERÍA; H. M. PETRILLI; L. C. V. ASSALI

Site localization of Cd impurities in sapphire

PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS; Año: 2012 vol. 86 p. 75203 - 75203

G. DARRIBA; R. FACCIO; M. RENTERÍA

Electronic structureof alpha-Al2O3 slabs: A local environment study

PHYSICA B - CONDENSED MATTER; Lugar: Amsterdam; Año: 2012 p. 3093 - 3095

G. N. DARRIBA; L. A. ERRICO; P. D. EVERSHEIM; G. FABRICIUS; M. RENTERÍA

Erratum: First-principles and time-differential gamma-gamma perturbed-angular-correlation spectroscopy study of structural and electronic properties of Ta-doped TiO2 semiconductor [Phys. Rev. B 79, 115213 (2009)]

PHYSICAL REVIEW B; Lugar: New York; Año: 2011 vol. 84 p. 239903 - 239903

DARRIBA G. N.; MUÑOZ E. L.; EVERSHEIM P.D.; RENTERÍS M.

Experimental and ab initio study of the nuclear quadrupole interaction of 181Ta-probes in an α-Fe2O3 single crystal

HYPERFINE INTERACTIONS; Año: 2010 vol. 197 p. 207 - 212

E. L. MUÑOZ; G. N. DARRIBA; A. G. BIBILONI; L. A. ERRICO; M. RENTERÍA

Ionic exchange of Hf donor impurities in the wide-gap semiconductor Tm2O3

JOURNAL OF ALLOYS AND COMPOUNDS; Año: 2010 vol. 495 p. 532 - 536

G. N. DARRIBA; L. A. ERRICO; P. D. EVERSHEIM; G. FABRICIUS; M. RENTER¨ªA

First-principles and time-differential gamma-gamma perturbed?angular-correlation spectroscopy study of structural and electronic properties of Ta-doped TiO2 semiconductor

PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS; Año: 2009 vol. 79 p. 115213 - 115213

G. N. DARRIBA; L. A. ERRICO; E. L. MUÑOZ; D. RICHARD; P. D. EVERSHEIM; M. RENTERÍA

Electric-field gradients at Ta donor impurities in Cr2O3(Ta) semiconductor

PHYSICA B - CONDENSED MATTER; Lugar: Amsterdam; Año: 2009 vol. 404 p. 2739 - 2741

M. RENTERÍA; A. G. BIBILONI; G. N. DARRIBA; L. A. ERRICO; E. L. MUÑOZ; D. RICHARD; J. RUNCO

Efficiency-Optimized Low-Cost TDPAC Spectrometer Using a Versátile Routing/Coincidence Unit

HYPERFINE INTERACTIONS; Año: 2008 vol. 181 p. 145 - 155

L. ERRICO; G. DARRIBA; M. RENTERÍA; Z. TANG; H. EMMERICH; S. COTTENIER

Nuclear quadrupole moment of the 99Tc ground state

PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS; Año: 2008 vol. 77 p. 195118 - 195118

G. N. DARRIBA; A. M. RODRIGUEZ; H. SAITOVITCH; P. R. J. SILVA; A. F. PASQUEVICH

Electric field gradients at 181Ta sites in HfOx

PHYSICA B - CONDENSED MATTER; Año: 2007 vol. 389 p. 185 - 188

M. RENTERÍA; G. N. DARRIBA; L. A. ERRICO; E. L. MUÑOZ; P. D. EVERSHEIM

Electric-field gradient characterization at 181Ta impurieties in sapphire single crystals

PHYSICA STATUS SOLIDI B-BASIC RESEARCH; Lugar: Weinheim; Año: 2005 vol. 242 p. 1928 - 1932

L. A. ERRICO; M. RENTERÍA; A. G. BIBILONI; G. N. DARRIBA

Temperatura dependence of the EFG at Cd-doped Lu2O3: How ab initio calculations can complement PAC experiments

PHYSICA STATUS SOLIDI C; Lugar: Weinheim; Año: 2005 vol. 2 p. 3576 - 3580

L. A. ERRICO; M. RENTERÍA; G. FABRICIUS; G. N. DARRIBA

FLAPW Study of the EFG Tensor at Cd Impurities in In2O3

HYPERFINE INTERACTIONS; Año: 2004 vol. 158 p. 63 - 69

G. N. DARRIBA; L. A. ERRICO; M. RENTERÍA

Intercambio por reacción en fase sólida de impurezs Hf en sitios de catión del semiconductor de ancho gap C-Tm2O3

ANALES AFA; Año: 2002 vol. 14 p. 218 - 222