N+ POLYCRYSTALLINE SILICON THIN FILM EMITTER USED AS A SEED LAYER

BUDINI RISSO

Congreso; 25th European Photovoltaic Solar Energy Conference and Exhibition /; 2010

The epitaxial thickening of a polycrystalline silicon seed layer grown on a glass substrate is of great interest for the preparation of polycrystalline silicon thin film solar cells and other thin films devices. In this contribution, we work on the solid phase epitaxial growth at temperatures below 580 ºC of a lightly/strongly boron doped (p–/p+) silicon layer on a strongly phosphorous doped (n+) polycrystalline emitter, which is part of the solar cell and works as a seed layer for the rest of the cell.–/p+) silicon layer on a strongly phosphorous doped (n+) polycrystalline emitter, which is part of the solar cell and works as a seed layer for the rest of the cell.+) polycrystalline emitter, which is part of the solar cell and works as a seed layer for the rest of the cell.