PERSONAL DE APOYO
RISSO gustavo Armando
congresos y reuniones científicas
Título:
POLYCRYSTALLINE SILICON THIN FILM EMITTER
Autor/es:
RISSO
Reunión:
Congreso; 25th European Photovoltaic Solar Energy Conference and Exhibition /; 2010
Resumen:
ABSTRACT: We worked on the solid phase epitaxial crystallisation of a lightly boron doped (p) silicon layer on a
heavily phosphorous doped (n+) polycrystalline emitter seed layer. Nickel-induced crystallisation and postcrystallisation
doping of intrinsic amorphous silicon thin films (~200 nm) were used to prepare the seed layer.
Optical microscopy revealed a solid phase epitaxial growth, with grains growing in a columnar structure. UV
reflectance measurements indicated that the films have a crystallinity fraction over 70 % after full crystallisation. Xray
diffraction allowed us to analyze also the crystallinity of the final structure and the orientation of the crystals.
Considering the design of a solar cell, we propose to obtain a polycrystalline silicon solar cell in a two step process:
(1) the Ni-induced crystallisation and subsequent doping of the emitter used as a seed layer (n+); (2) the deposition
and solid epitaxial growth of the absorber and back surface field layers (p/p+) onto the emitter.p) silicon layer on a
heavily phosphorous doped (n+) polycrystalline emitter seed layer. Nickel-induced crystallisation and postcrystallisation
doping of intrinsic amorphous silicon thin films (~200 nm) were used to prepare the seed layer.
Optical microscopy revealed a solid phase epitaxial growth, with grains growing in a columnar structure. UV
reflectance measurements indicated that the films have a crystallinity fraction over 70 % after full crystallisation. Xray
diffraction allowed us to analyze also the crystallinity of the final structure and the orientation of the crystals.
Considering the design of a solar cell, we propose to obtain a polycrystalline silicon solar cell in a two step process:
(1) the Ni-induced crystallisation and subsequent doping of the emitter used as a seed layer (n+); (2) the deposition
and solid epitaxial growth of the absorber and back surface field layers (p/p+) onto the emitter.n+) polycrystalline emitter seed layer. Nickel-induced crystallisation and postcrystallisation
doping of intrinsic amorphous silicon thin films (~200 nm) were used to prepare the seed layer.
Optical microscopy revealed a solid phase epitaxial growth, with grains growing in a columnar structure. UV
reflectance measurements indicated that the films have a crystallinity fraction over 70 % after full crystallisation. Xray
diffraction allowed us to analyze also the crystallinity of the final structure and the orientation of the crystals.
Considering the design of a solar cell, we propose to obtain a polycrystalline silicon solar cell in a two step process:
(1) the Ni-induced crystallisation and subsequent doping of the emitter used as a seed layer (n+); (2) the deposition
and solid epitaxial growth of the absorber and back surface field layers (p/p+) onto the emitter.n+); (2) the deposition
and solid epitaxial growth of the absorber and back surface field layers (p/p+) onto the emitter.p/p+) onto the emitter.