INVESTIGADORES
CANEIRO Alberto
artículos
Título:
PREPARATION OF NASICON THIN FILMS BY DIP-COATING ON Si/SiO, WAFERS AND CORRESPONDING C-V MEASUREMENTS
Autor/es:
YUAN LONG HUANG*; A. CANEIRO; MOKHTAR ATTARI; P. FABRY
Revista:
THIN SOLID FILMS
Editorial:
ELSEVIER SCIENCE SA
Referencias:
Lugar: Amsterdam; Año: 1991 vol. 196 p. 283 - 294
ISSN:
0040-6090
Resumen:
The dip-coating process, based on the sol-gel approach, has been studied foruse in preparing Na+ Super Ionic Conductor (NASICON) thin films. Differentialthermal analysis (DTA) and X-ray analysis indicate a crystallization temperature ofabout 700 C. The X-ray spectrum is consistent with that of NASICON ceramics.The first results obtained by the C-V method on electrolyte-oxide-semiconductorcapacitors are very promising. To avoid crack initiation, the viscosity of the solutionmust be sufficiently low to give layer thicknesses less than 1OOnm. Multidippinggives a better coating.
