INVESTIGADORES
VALDES Matias Hernan
congresos y reuniones científicas
Título:
The performance of sulphurized TiO2/In2S3/CuInSe2 solar cells.
Autor/es:
M. VALDÉS; A. GOOSSENS; M. VÁZQUEZ
Lugar:
Río de Janeiro, Brasil.
Reunión:
Conferencia; 11th International Conference on Advanced Materials ICAM 2009; 2009
Institución organizadora:
Sociedade Brasileira de Pesquisa em Materiais (SBPMat)
Resumen:
An In2S3 buffer layer has been prepared by spray pyrolysis on TiO2/TCO glass substrates. On top of them CuInSe2 films have been electrodeposited from a single bath solution. CISe films have been deposited potentiostatically using a deareated electrolyte at different potentials. Each layer has been studied by electron microscopy, electrochemical impedance and optical absorption spectroscopy. After a thermal annealing stage in a sulphur atmosphere at 550 ºC for 10-30 minutes the crystallinity of the resulting chalcogenide is excellent. In particular the nominal crystal structure and the band gap of 1.4 eV are found and a clear photoconductivity response is obtained.
