The performance of sulphurized TiO2/In2S3/CuInSe2 solar cells.

M. VALDES; A. GOOSSENS; M. VAZQUEZ

Rio de Janeiro, Brasil

Congreso; 11th. International Conference on Advanced Materials; 2009

An In2S3 buffer layer has been prepared by spray – pyrolysis on TiO2/TCO glass substrates. On top of them CuInSe2 films have been electrodeposited from a single bath solution. CISe films have been deposited potentiostatically using a deareated electrolyte at different potentials. Each layer has been studied by electron microscopy, electrochemical impedance and optical absorption spectroscopy. After a thermal annealing stage in a sulphur atmosphere at 550OC for 10-30 minutes the crystallinity of the resulting chalcogenide is excellent. In particular the nominal crystal structure and the band gap of 1.4 eV are found and a clear photoconductivity response is obtained.