Influence of a nanostructured ZnO layer on the carrier recombination and dynamics in chalcopyrite solar cells

PEREYRA, C. JAVIER; DI IORIO, YESICA; BERRUET, MARIANA; VAZQUEZ, MARCELA; MAROTTI, RICARDO E.

JOURNAL OF MATERIALS SCIENCE

SPRINGER

Año: 2020

0022-2461

The influence of the incorporation of a nanostructured ZnO layer on the carrierrecombination and dynamics of chalcopyrite solar cells was studied. Intensity modulated photocurrent and photovoltage spectroscopy (IMPS and IMVS,respectively) were used for the charge carrier dynamics characterization of twoZnO/In2S3/CuInS2-based solar cells. The charge carrier dynamics on a cell witha ZnO nanorod (ZnO-NR) layer was compared with a similar sample withoutthe nanostructured layer. The IMPS and IMVS responses were measured atdifferent continuous light intensities, and a multitrapping behavior wasobserved. Higher recombination and transport times were obtained for the cellincluding the NR layer. Moreover, an enhancement in the charge carrier collection efficiency was observed for the cell with the NR additional layer. The increased surface-to-volume ratio of the NR layer and the passivation of defects in the ZnO/In2S3 interface could be associated with the observed chargedynamics enhancement.