INVESTIGADORES
RENTERIA Mario
artículos
Título:
Intercambio por Reacción en Fase Sólida de Impurezas Hf en Sitios de Catión del Semiconductor de Ancho Gap C-Tm2O3
Autor/es:
G.N. DARRIBA; L.A. ERRICO; M. RENTERÍA
Revista:
Anales AFA
Editorial:
Asociación Física Argentina
Referencias:
Lugar: Tandil; Año: 2003 vol. 14 p. 218 - 221
ISSN:
0327-358X
Resumen:
The ionic exchange of donor Hf impurities in substitutional cationic sites of the cubic (bixbyite) phase of the wide-gap semiconductor C-Tm2O3 was studied. The doping process was performed by ball-milling-assisted solid-state reaction of neutron-activated m-HfO2 and C-Tm2O3. 181Ta atoms, obtained by beta-decay of the 181Hf-isotope, were used as probes in Time-Differential Perturbed-Angular-Correlation experiments carried out after each step of the doping process. The measured hyperfine interactions at 181Ta sites enabled the electric-field gradient (EFG) characterization at representative Hf sites of each step of the process. The efficiency and substitutional character of the exchange process is discussed and elucidated in the frame of an empirical EFG systematic established in isostructural rare-earth oxides (bixbyites).
