Electric Field Gradients in Semiconductors and Insulators: Empirical Correlation Found in Binary Oxides

M. RENTERÍA; C.P. MASSOLO; A.G. BIBILONI

MODERN PHYSICS LETTERS B

WORLD SCIENTIFIC PUBL CO PTE LTD

Lugar: London, UK; Año: 1992 vol. 6 p. 1819 - 1825

0217-9849

For the first time a well defined correlation between local and lattice contributions of the electric field gradient in semiconductors and insulators is presented. The local component of the electric field gradient in binary oxides, originated in extraionic contributions, is extracted from all quadrupole coupling constants measured in Perturbed Angular Correlation experiments with 111Cd probes. The resulting systematics reveals a linear dependence of the local component over a wide range of ionic efg values, both contributing with opposite signs. The clustering of the data points is explained in terms of the oxygen near neighbor symmetry.