Ion Beam Analysis of a CIGS Solar Cell

M. TROVIANO; G. MEYER; G. RUANO; G. ZAMPIERI; H. ASCOLANI; G. BERNARDI; S. SUÁREZ

Itapema

Conferencia; 20th International Conference on Ion Beam Analysis; 2011

In the present work we study the layer composition of a CIGS film grown on a Mo/glass substrate by applying two different experimental methods. In first place, a Rutherford Backscattering Spectrometry (RBS) was performed with 4.5 MeV alpha particles, and then complemented with a Particle Induced X-ray Emission (PIXE) study, to obtain the layer composition and distribution. Secondly, a depth profiling was performed combining Ar bombardment (3 keV) with X-ray photoemission induced with unmonochromatized Al-K_alphaphotons. The intensities of the Mg1s, F1s, Cd3d, Ga2p, Cu2p, In3d, and Se3d lines were followed. It is seen that the Cu and Se signals are practically constant inside the cell whereas the Ga signal increases while the In signal decreases. We show the compatibility between both, the ion beam and depth profiling by Ar sputtering, methods and emphasize the ion beam analysis as an ease and quickly non-destructive study.