Two Dimensional Simulations of Microcrystalline Silicon Solar Cells

TARETTO, K. R.; RAU, U.; WERNER, J.-H.

DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA

Trans-Tech

Lugar: Zurich; Año: 2001 p. 311 - 316

1012-0394

We numerically model pin solar cells of µc-Si and investigate the influence of cell thickness, grain size, doping and recombination velocity at contacts, comparing the results with experimental values. At high recombination velocities at contacts of 106 cm/s, the simulations show that until a p-layer doping of about 5x1016 cm-3, the pin cells remain efficient; and with higher dopings, the efficiency decreases. If the recombination at contacts is maintained at a low value of 100 cm/s, increasing the p-layer doping enables high cell efficiencies. We conclude that pin cells with high recombination at contacts or at internal surfaces, have better chances to be more efficient than regular pn cells.