Tailoring texture in laser crystallization of silicon thin-films on glass

NERDING, M.; CHRISTIANSEN, S.; DASSOW, R.; TARETTO, K. R.; KOEHLER, J.; STRUNK, H.-P.

DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA

Trans-Tech

Lugar: Zurich; Año: 2003 p. 173 - 178

1012-0394

We investigate the texture of polycrystalline silicon thin films crystallized by sequentaial lateral solidification of amorphous silicon on glass substrates with a frequency doubled Nd:YVO4 laser. Electron back-scattering diffraction experiments indicate a textured grain population in the polycrystalline silicon films. Type and extent of texture depend on the thickness of the amorphous silicon layer, on the repetition rate of the laser pulses and on whether or not a buffer layers is present on the glass substrate. Crystallization on a silicon nitride buffer layer or crystallization with high repetition rates result in a stron preferential {111} orientation of the surface normal. Crystallization of amorphous silicon with film thicknesses below 100 nm leads to a marked {100} surface normal with a preferential alignment of the grains along <100> within the films. We can explain texture formation in terms of interface energies and lateral overgrowth and thus provide a means for tailoring the texture and consequently the grain boundary populations.