Few-electron semiconductor quantum dots with Gaussian confinement

SERGIO S. GOMEZ; RODOLFO H. ROMERO

Central European Journal of Physics

Versita, co-published with Springer Verlag

Lugar: Warsaw and Berlin; Año: 2008 vol. 7 p. 12 - 21

1895-1082

We have performed Hartree–Fock calculations of the electronic structure of N < 10 electrons in a quantumdot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N boundelectrons in the system. We show that the most relevant parameter determining the number of boundelectrons is V0*R2. Such a feature arises from widely valid scaling properties of the confining potential.Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with theHund rule. The shell structure becomes less and less noticeable as the well radius increases.