INVESTIGADORES
ROMERO rodolfo Horacio
artículos
Título:
Few-electron semiconductor quantum dots with Gaussian confinement
Autor/es:
S. S. GOMEZ; R. H. ROMERO
Revista:
Central European Journal of Physics
Editorial:
Versita and Springer-Verlag
Referencias:
Lugar: Warsaw and Berlin; Año: 2009 vol. 7 p. 12 - 21
ISSN:
1895-1082
Resumen:
We have performed Hartree Fock calculations of the electronic structure of N<10electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V_0 R^2. Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases. copy