INTECIN   20395
INSTITUTO DE TECNOLOGIAS Y CIENCIAS DE LA INGENIERIA "HILARIO FERNANDEZ LONG"
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
Evidence of SnSb2Te4 rocksalt metastable phase of thin films grown by pulsed laser deposition
Autor/es:
ROCCA, J.A.; BILOVOL V.; A. UREÑA; FONTANA, M.
Lugar:
Chisinau
Reunión:
Conferencia; 9th International Conference on Amorphous and Nanostructured Chalcogenides; 2019
Institución organizadora:
Technical University of Moldova
Resumen:
SnSb2Te4, an intermetallic compound in the pseudobinary SnTe-Sb2Te3 system, looks as a promising candidate for phase-change material in non-volatile memories applications. Thin films having thickness from 50 to 150 nm were grown by pulsed laser deposition (varying the power of the pulsed laser from 270 to 800 mW) of targets of SnSb2Te4 in 21 R-type structure (R-3m) consisting of rocksalt-type blocks separated by van der Waals gaps. While in thermal equilibrium this phase crystallizes into a complex cubic close-packed structure [1], the thin films obtained had a simple NaCl-structure (Fm-3m) (metastable phase) as it was deduced from conventional XRD measurements in grazing incidence of the investigated films. The metastable phase transitioned to the stable complex structure during the measurements of electrical resistance on temperature dependence (R vs.T). Starting R vs.T measurements with semiconducting behavior for as made state, after the thermal cycle, the final R-3m stable phase (on cooling) evidenced a metallic behavior. The structural modifications were witnessed also by Raman spectroscopy. 119Sn Mössbauer spectroscopy applied for studying the surface state of as made films evidenced an important quantity of Sn(IV) attributed to Sn in SnO2.