INTECIN 20395
INSTITUTO DE TECNOLOGIAS Y CIENCIAS DE LA INGENIERIA "HILARIO FERNANDEZ LONG"
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
Injection Measurements and Simulation for a Floating Gate MOSFET Designed for Radiation Measurements
Autor/es:
S. CARBONETTO; A. FAIGON; M. GARCÍA INZA; J. C. SUAREZ MARTENE
Lugar:
Mar del Plata
Reunión:
Conferencia; 2019 Argentine Conference on Electronics (CAE); 2019
Resumen:
In this paper, a Floating Gate transistor designed and fabricated to be used as a radiation sensor is presented, and the charge injection process through an injection electrode is studied. The device was successfully charged, and the injection process was simulated in a SPICE software, considering that the injection mechanism was Fowler-Nordheim tuneling. The parameters for the Fowler-Nordheim current were found and simulations successfully reproduced the measurements. These simulations will allow to improve the desing and the charge injection setup.
