INTECIN   20395
INSTITUTO DE TECNOLOGIAS Y CIENCIAS DE LA INGENIERIA "HILARIO FERNANDEZ LONG"
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
Electrical characterization of thin film chalcogenide glasses for gas sensors
Autor/es:
A ESCOBAR; JM SILVEYRA; MA UREÑA; O CUELLAR RODRIGUES; JM CONDE GARRIDO
Lugar:
Saint-Malo
Reunión:
Congreso; PNCS-ESG 2018; 2018
Resumen:
Among theseveral applications that chalcogenide glasses have, one of the latest is theiruse as sensitive materials for the detection of gases. Although many materialshave been successfully tested as sensitive membrane for gas sensors,chalcogenide glasses have the advantage of not requiring high temperatures forthe detection of gasses. Tellurium based membranes were the subject of manyinvestigations during the last decade [1], but other chalcogenide systems arebeing studied as well [2,3].In thiswork, we studied the electrical properties of GeTe and GeSe3 thin film glassesdeposited by pulsed laser deposition (PLD). We measured the conductivity of thefilms by DC measurements and AC spectroscopy. We performed the measurementsunder various temperatures and under vacuum and NO2 atmospheres. We encounteredin both systems that their conductivity changes in the presence of NO2, whichmeans that they are both good options for sensing NO2. On account of theseresults, in future work, we will study whether the addition of other elementsto the membrane will improve the electrical response of the sensor. [1] D.Tsiulyanu, M. Ciobanu, Impedance Characterization of Gas Sensitive S-Te BasedQuaternary Chalcogenides, 3rd International Conference on Nanotechnologies andBiomedical Engineering pp 382-388, DOI: 10.1007/978-981-287-736-9_92[2] V.Georgieva, Tz. Yordanov, V. Pamukchieva, D. Arsova, V. Gadjanova, and L.Vergovless, Gas Sensing Properties of Ge‐As‐S Thin Films, AIP ConferenceProceedings 1203, 1079 (2010); DOI: http://dx.doi.org/10.1063/1.3322314[3] PingChen, Maria Mitkova, Dmitri A. Tenne, Kasandra Wolf, Velichka Georgieva, LazarVergov, Study of the sorption properties of Ge20Se80 thin films for NO2 gassensing, Thin Solid Films, Volume 525, 15 December 2012, Pages 141-147, ISSN0040-6090, DOI: http://dx.doi.org/10.1016/j.tsf.2012.09.077.