Raman spectroscopy of chalcogenide glasses thin film of Agx(Ge0.25Se0.75)100-x system

JUAN MANUEL CONDE GARRIDO; A. PIARRISTEGUY; R. LE PARC; M. A. UREÑA; M. FONTANA; B. ARCONDO; A. PRADEL

Buenos Aires

Congreso; At the Frontiers of Condensed Matter VI; 2012

CONEA

Chalcogenide glasses have many applications as a result of their particular optical and electrical properties. Ag-Ge-Se systems were studied and tested as new materials for building non-volatile memories [1]. In this work, the effect of silver content on glass structure in Agx(Ge0.25Se0.75)100-x (0≤x≤ 25 at.%) films has been analysed using Raman spectroscopy. The films were prepared by pulsed laser deposition from bulk glasses target of composition Agx(Ge0.25Se0.75)100-x and deposited onto microscope slides. Ge0.25Se0.75 binary film exhibits the typical Raman vibration modes: Ge-Se corner-sharing tetrahedra (CST) mode at 194 cm-1, low scattering from edge sharing tetrahedra (EST) at 221 cm-1, and Se chains (Se R) at 260 cm-1 (stretching mode). The same modes are measured in Agx(Ge0.25Se0.75)100-x ternary thin films. However, a red shift of the different excited modes is observed for ternary films spectra when compared to the spectra of binary films. Also, an intensity reduction of the band ES is observed in ternary thin films. These facts point out that the Ag atom acts as network modifier.